Research of Temperature Rise on IGBT module and DC Busbar for a Single-Phase PWM Rectifier

被引:0
作者
Zhu Yifeng [1 ]
Ge Qiongxuan [1 ]
Zhao Lu [1 ]
机构
[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Power Elect & Elect Drive, Beijing 100190, Peoples R China
来源
2012 15TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2012) | 2012年
关键词
Temperature rise; IGBT; Busbar; Rectifier;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the application of power converters constructed by IGBTs, the temperature rise of IGBTs is often considered to ensure safe operation of the system. The thermal distribution of a single-phase Pulse Width Modulation (PWM) rectifier is studied here. Based on accurate power dissipation of IGBTs and DC busbar, a thermal circuit model and a Finite Element Method (FEM) model are given to solve the temperature rise on the IGBTs and DC busbar. The computational results and simulation results are in agreement with the measured value tested on the 25kW single-phase PWM rectifier, which demonstrates the effectiveness of these approaches.
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页数:4
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