Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy

We report on a comparative optical study of InGaN:Eu quantum dots (QDs) and GaN:Eu layer grown by molecular beam epitaxy (MBE). Analysis of the D-5(0)-> F-4(7) transition as a function of the excitation wavelength shows that Eu3+ ions in InGaN:Eu QDs are located inside InGaN QDs and also in the GaN barrier layer. The existence of Eu3+ ions in the GaN barrier layer is explained by Eu segregation/diffusion during growth. For Eu3+ ions located inside InGaN QDs the photoluminescence (PL) shows only a slight decrease with temperature from 5 K to 300 K. In contrast, the PL from Eu3+ ions in the GaN barrier layer or in GaN thick layer shows a much more pronounced thermal quenching. (c) 2005 Elsevier B.V. All rights reserved.