Polysiloxane-poly(vinyl alcohol) composite dielectrics for high-efficiency low voltage organic thin film transistors

被引：16

作者：

Cao, Jupeng ^{[1
]}

Wei, Xiaoyun ^{[1
]}

Che, Yuxuan ^{[2
]}

Li, Aiyuan ^{[1
]}

He, Yaowu ^{[1
]}

He, Chao ^{[1
]}

Zhu, Yanan ^{[1
]}

Chen, Xiaolong ^{[1
]}

Li, Tingting ^{[3
]}

Murtaza, Imran ^{[4
]}

Yan, Lijia ^{[3
]}

Perepichka, Dmitrii F. ^{[2
]}

Meng, Hong ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China

[2] McGill Univ, Dept Chem, Montreal, PQ H3A 0B8, Canada

[3] USBT Nanjing Organ Optoelect Mat Co Ltd, Nanjing 210022, Jiangsu, Peoples R China

[4] Int Islamic Univ, Fac Basic & Appl Sci, Islamabad 44000, Pakistan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 16期

关键词：

FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; SURFACE-ENERGY; ELECTRICAL STABILITY; N-TYPE; PERFORMANCE; POLYMER; TRANSPORT; MOBILITY; LAYER;

D O I：

10.1039/c9tc00717b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The gate dielectric layer is one of the important components in organic thin film transistors (OTFTs) which affects the charge mobility, power consumption and stability of the device. Here, we report new composite polymer dielectrics prepared by sol-gel chemistry from commercial siloxanes and poly(vinyl alcohol), featuring a high dielectric constant (k similar to 8-16) and hydrophobicity. OTFTs fabricated with the developed polymer dielectric exhibit ultra-low driving voltage (< 3 V), extremely high charge mobility (up to 6 cm(2) V-1 s(-1) for pentacene and up to 50 cm(2) V-1 s(-1) C8-BTBT), negligible hysteresis and excellent operational stability. This is an important step towards the practical realization of low-cost p-type OTFTs.

引用

页码：4879 / 4886

页数：8

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