Application of stencil masks for ion beam lithographic patterning

被引：6

作者：

Brun, S. ^{[1
]}

Savu, V. ^{[2
]}

Schintke, S. ^{[3
]}

Guibert, E. ^{[1
]}

Keppner, H. ^{[1
]}

Brugger, J. ^{[2
]}

Whitlow, H. J. ^{[1
]}

机构：

[1] Haute Ecole Arc Ingn, Inst Microtechnol Appl, CH-2300 La Chaux De Fonds, Switzerland

[2] Ecole Polytech Fed Lausanne, Lab Microsyst LMIS, CH-1015 Lausanne, Switzerland

[3] Univ Appl Sci Western Switzerland, Inst Micro & Nano Tech, HEIG VD, Lab Appl NanoSci MNT LANS, CH-1401 Yverdon, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 306卷

关键词：

Ion beam lithography; FTFE; Silicon; PMMA; Patterning; Stencil masks;

D O I：

10.1016/j.nimb.2012.12.064

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of Au/Si3N4 stencil masks for the transfer of patterns using different MeV-ion beams with various substrates has been investigated. The techniques investigated were namely, conventional lithography with positive- and negative-tone resist polymers, oxygen ion-induced etching of PTFE and patterning using an etch-stop in silicon. We demonstrate that using different well-known microtechnology material-modification techniques, patterns can be transferred using stencil masks and broad ion beams to nanomachining scenarios. In the case of the etch-stop process; writing of 3D micropatterns with different height levels was achieved using a broad beam. The stencil masks were found to be durable with no obvious deterioration and well suited for exposure of large areas. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：292 / 295

页数：4

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