Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

被引：98

作者：

Omrani, Mir Kazem ^{[1
]}

Minbashi, Mehran ^{[1
]}

Memarian, Nafiseh ^{[1
]}

Kim, Dae-Hwan ^{[2
]}

机构：

[1] Semnan Univ, Fac Phys, Semnan 3513119111, Iran

[2] DGIST, Convergence Res Ctr Solar Energy, Daegu 42988, South Korea

来源：

SOLID-STATE ELECTRONICS | 2018年 / 141卷

关键词：

CZTSSe solar cell; Numerical simulation; Back surface field; SnS layer; BACK SURFACE FIELD; EFFICIENCY; SIMULATION;

D O I：

10.1016/j.sse.2017.12.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the CZTSSe (Cu2ZnSn(S,Se)(4)) solar cells, with Al/ZnO:Al/ZnO (i)/CdS/CZTSSe/Mo structure, have been simulated. The simulation results have been compared and validated with real experimental results. Next, suggestions for improving the performance of CZTSSe solar cell have been provided. A SnS layer has been used as back surface field (BSF) layer. Different physical parameters of SnS layer are investigated, and the optimum values are selected. It has been found that by inserting a BSF layer with optimum parameters, the efficiency of CZTSSe solar cell increases from 12.3% to 17.25% due to enhancement of both short-circuit current density (Jsc) and open circuit voltage (Voc). For this optimized cell structure, the maximum Jsc = 37.37 mA/cm(2), Voc = 0.605 V, and fill factor = 76.28% are obtained under 1.5 AM illumination.

引用

页码：50 / 57

页数：8

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