Single crystalline β-Ga2O3 nanowires synthesized by thermal oxidation of GaSe layer

被引：26

作者：

Filippo, Emanuela ^{[1
]}

Siciliano, Maria ^{[1
]}

Genga, Alessandra ^{[1
]}

Micocci, Gioacchino ^{[1
]}

Tepore, Antonio ^{[1
]}

Siciliano, Tiziana ^{[1
]}

机构：

[1] Univ Salento 1, Dept Mat Sci, I-73100 Lecce, Italy

来源：

MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 05期

关键词：

Nanostructures; Oxides; Crystal growth; Vapour deposition; Electron microscopy; PHOTOLUMINESCENCE; GA2O3; NANOSTRUCTURES; NANORODS; GROWTH;

D O I：

10.1016/j.materresbull.2012.08.083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-Ga2O3 nanowires were grown by thermal oxidation of GaSe single crystal surface under a mixture of argon-air flow, without the presence of a catalyst or foreign substrate. The nanowires were obtained after annealing GaSe surface at different temperatures (720 degrees C, 850 degrees C and 930 degrees C) for 5 h and they were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction pattern. The lengths of the nanowires varied in the range 50-180 nm, while the typical diameters of the nanowires were in the range 60-90 nm. A possible mechanism has been proposed in order to explain the growth of oxide nanowires. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1741 / 1744

页数：4

共 30 条

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