Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

被引：61

作者：

Arai, Miho ^{[1
]}

Moriya, Rai ^{[1
]}

Yabuki, Naoto ^{[1
]}

Masubuchi, Satoru ^{[1
]}

Ueno, Keiji ^{[2
]}

Machida, Tomoki ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan

[3] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 10期

基金：

日本学术振兴会;

关键词：

HETEROSTRUCTURES; GRAPHENE; MAGNETORESISTANCE; TRANSISTORS; TRANSPORT;

D O I：

10.1063/1.4930311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction. (C) 2015 AIP Publishing LLC.

引用

页数：4

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