Gain dependence of the noise in the single electron transistor

被引：43

作者：

Starmark, B ^{[1
]}

Henning, T

Claeson, T

Delsing, P

Korotkov, AN

机构：

[1] Univ Gothenburg, Dept Microelect & Neurosci, S-41296 Gothenburg, Sweden

[2] Chalmers, S-41296 Gothenburg, Sweden

[3] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 04期

关键词：

D O I：

10.1063/1.371020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not primarily due to resistance fluctuations. For one sample, we find a low minimum charge noise of q(n) approximate to 2 x 10(-5) e/root Hz at a frequency of 4.4 kHz. (C) 1999 American Institute of Physics. [S0021-8979(99)05815-6].

引用

页码：2132 / 2136

页数：5

共 27 条

[1] SHOT-NOISE SUPPRESSION IN THE SINGLE-ELECTRON TUNNELING REGIME [J].

BIRK, H ;

DEJONG, MJM ;

SCHONENBERGER, C .

PHYSICAL REVIEW LETTERS, 1995, 75 (08) :1610-1613

[2]

BOUCHIAT V, 1997, THESIS PARIS 6

[3] OFFSET MASKS FOR LIFT-OFF PHOTOPROCESSING [J].

DOLAN, GJ .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :337-339

[4] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].

FULTON, TA ;

DOLAN, GJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (01) :109-112

[5] Bias and temperature dependence of the noise in a single electron transistor [J].

Henning, T ;

Starmark, B ;

Claeson, T ;

Delsing, P .

EUROPEAN PHYSICAL JOURNAL B, 1999, 8 (04) :627-633

[6] FABRICATION AND CHARACTERIZATION OF SINGLE-ELECTRON TUNNELING TRANSISTORS IN THE SUPERCONDUCTING STATE [J].

Hergenrother, J. M. ;

Tuominen, M. T. ;

Tighe, T. S. ;

Tinkham, M. .

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1993, 3 (01) :1980-1982

[7]

KOROTKOV AN, 1992, SPRIN S ELE, V31, P45

[8] Noise in Al single electron transistors of stacked design [J].

Krupenin, VA ;

Presnov, DE ;

Savvateev, MN ;

Scherer, H ;

Zorin, AB ;

Niemeyer, J .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3212-3215

[9] SINGLE-ELECTRON CHARGING EFFECTS IN ONE-DIMENSIONAL ARRAYS OF ULTRASMALL TUNNEL-JUNCTIONS [J].

KUZMIN, LS ;

DELSING, P ;

CLAESON, T ;

LIKHAREV, KK .

PHYSICAL REVIEW LETTERS, 1989, 62 (21) :2539-2542

[10] SINGLE-ELECTRON TRANSISTORS - ELECTROSTATIC ANALOGS OF THE DC SQUIDS [J].

LIKHAREV, KK .

IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) :1142-1145

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