Monte Carlo model of charging in resists in e-beam lithography

被引：11
作者：
Ko, YU [1 ]
Joy, DC [1 ]
机构：
[1] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷
关键词：
beam deflection; charging; electron beam lithography; mask pattern; insulator;
D O I：
10.1117/12.436751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We show first in detail how the non-unity yield of electron generation in insulator resists leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.
引用
收藏
页码：544 / 551
页数：8
相关论文
共 50 条
[31]   Chemically amplified molecular resists for electron beam lithography [J].
Robinson, A. P. G. ;
Zaid, H. M. ;
Gibbons, F. P. ;
Palmer, R. E. ;
Manickam, M. ;
Preece, J. A. ;
Brainard, R. ;
Zampini, T. ;
O'Connell, K. .
MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) :1115-1118
[32]   Optimization of DyFe nanostructures using E-beam lithography for magneto-optical applications [J].
Abbas, Syed Kumail ;
Akbar, Ali ;
Atiq, Shahid ;
Saleem, Murtaza ;
Iftikhar, Mamoor ;
Rafiq, Hafiz Muhammad ;
Naseem, Shahzad ;
Anwar, Muhammad Sabieh .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2019, 469 :196-202
[33]   Resists for Helium Ion Beam Lithography: Recent Advances [J].
Kiran, Nagarjuna Ravi ;
Chauhan, Manvendra ;
Sharma, Satinder K. ;
Ghosh, Subrata ;
Gonsalves, Kenneth E. .
ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (12) :3805-3817
[34]   Efficient E-Beam Lithography Exposure Strategies for Diffractive X-ray Optics [J].
Guzenko, V. A. ;
Romijn, J. ;
Vila-Comamala, J. ;
Gorelick, S. ;
David, C. .
10TH INTERNATIONAL CONFERENCE ON X-RAY MICROSCOPY, 2011, 1365 :92-95
[35]   E-beam lithography fabricated optical 90-degree hybrid on InP platform [J].
Pan, Mingming ;
Wang, Bing .
AOPC 2024: OPTICAL DEVICES AND INTEGRATION, 2025, 13499
[36]   Benchmark test of Monte-Carlo simulation for high resolution electron beam lithography [J].
Rommel, Marcus ;
Hoffmann, Karl E. ;
Reindl, Thomas ;
Weis, Juergen ;
Unal, Nezih ;
Hofmann, Ulrich .
MICROELECTRONIC ENGINEERING, 2012, 98 :202-205
[37]   Development of a next generation e-beam lithography system for 1Gbit DRAM masks [J].
Komagata, T ;
Nakagawa, Y ;
Takemura, H ;
Gotoh, N ;
Tanaka, K .
EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 :313-325
[38]   Impact of e-beam lithography and data preparation optimization on optical performance of integrated photonic waveguides [J].
Greul, M. ;
Edelmann, K. ;
Fasold, S. ;
Hartbaum, J. ;
Linn, E. ;
Stolberg, I. ;
Weidenmueller, U. .
NOVEL PATTERNING TECHNOLOGIES 2024, 2024, 12956
[39]   Fabrication of large scale arrays of metallic nanodots by means of high resolution e-beam lithography [J].
Guzenko, Vitaliy A. ;
Ziegler, Joerg ;
Savouchkina, Anastasia ;
Padeste, Celestino ;
David, Christian .
MICROELECTRONIC ENGINEERING, 2011, 88 (08) :1972-1974
[40]   Stability of HSQ nanolines defined by e-beam lithography for Si nanowire field effect transistors [J].
Regonda, Suresh ;
Aryal, Mukti ;
Hu, Wenchuang .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06) :2247-2251
12345