Monte Carlo model of charging in resists in e-beam lithography

被引：11
作者：
Ko, YU [1 ]
Joy, DC [1 ]
机构：
[1] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷
关键词：
beam deflection; charging; electron beam lithography; mask pattern; insulator;
D O I：
10.1117/12.436751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We show first in detail how the non-unity yield of electron generation in insulator resists leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.
引用
收藏
页码：544 / 551
页数：8
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