Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

被引：20
作者：
da Silva, Wilson J. [1 ]
Huemmelgen, Ivo A. [1 ]
Mello, Regina M. Q. [2 ]
Ma, Dongge [3 ]
机构：
[1] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, PR, Brazil
[2] Univ Fed Parana, Dept Quim, BR-81531990 Curitiba, PR, Brazil
[3] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2967731
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C-60 fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of similar to 1.5 mu A and constant at collector voltages between 1 and 5 V.
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页数：3
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