Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

被引：20

作者：

da Silva, Wilson J. ^{[1
]}

Huemmelgen, Ivo A. ^{[1
]}

Mello, Regina M. Q. ^{[2
]}

Ma, Dongge ^{[3
]}

机构：

[1] Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, PR, Brazil

[2] Univ Fed Parana, Dept Quim, BR-81531990 Curitiba, PR, Brazil

[3] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2967731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C-60 fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of similar to 1.5 mu A and constant at collector voltages between 1 and 5 V.

引用

页数：3

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