Optical properties of hybrid Si1-xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

被引：2
|
作者：
Kil, Yeon-Ho
Yang, Hyeon Deok
Yang, Jong-Han
Kang, Sukill
Jeong, Tae Soo
Choi, Chel-Jong
Kim, Taek Sung [1 ]
Shim, Kyu-Hwan
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 17卷
基金：
新加坡国家研究基金会;
关键词：
Hybrid; SiGe; Quantum dot; Quantum well; Raman; Photocurrent; RAMAN-SPECTROSCOPY; BAND-STRUCTURE; DOTS; ISLANDS; LAYERS; ORGANIZATION; PHOTOLUMINESCENCE; EVOLUTION; STRAIN;
D O I：
10.1016/j.mssp.2013.09.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We experimentally investigated the optical properties of structures consisting of a Si1-xGex/Si quantum well and stacked quantum dots on Si substrates. The Ge composition determined for Si1-xGex quantum wells and dots was approximately 20% and 30%, respectively. Three Raman peaks observed at approximately 520, 410, and 295 cm(-1) correspond to vibration of Si-Si, Si-Ge, and Ge-Ge phonons, and a peak related to Si1-xGex quantum dots was observed at 490 cm(-1). Photocurrent spectra were dominated by transitions related to the quantum dots and quantum well corresponding to the energy gap and split-off band for Si and energy for quantum dots and wells. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：178 / 183
页数：6
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