Suppression of transient enhanced diffusion by local-oxidation-silicon-induced stress

被引：1

作者：

Okuno, M ^{[1
]}

Aoyama, T ^{[1
]}

Nakamura, S ^{[1
]}

Arimoto, H ^{[1
]}

Horiuchi, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

transient enhanced diffusion; TED; LOGOS; boron; mechanical stress; reverse short-channel effect;

D O I：

10.1143/JJAP.38.2411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluated the transient enhanced diffusion (TED) of boron on two different local oxidation silicon (LOCOS) structures. Boron profiles were measured by secondary ion mass spectroscopy (SIMS) sputtering from the back surface of the wafers to eliminate any effects caused by uneven surfaces of the LOCOS structures. To evaluate the TED at the surface, we also measured the threshold voltage roll-off of n-type metal-oxide-semiconductor transistors. The TED of boron was suppressed for the LOGOS structure with a high mechanical stress.

引用

页码：2411 / 2414

页数：4

共 50 条

[11] Simulation of transient enhanced diffusion of boron induced by silicon self-implantation
Uematsu, M
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 1997, : 89 - 92
[12] Simulation of transient enhanced diffusion of boron induced by silicon self-implantation
Uematsu, Masashi
Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (8 A):
[13] Simulation of transient enhanced diffusion of boron induced by silicon self-implantation
Uematsu, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8A): : L982 - L985
[14] Suppression of boron transient enhanced diffusion by C trapping
Mirabella, S
Coati, A
Scalese, S
De Salvador, D
Pulvirenti, S
Bisognin, G
Napolitani, E
Terrasi, A
Berti, M
Carnera, A
Drigo, AV
Priolo, F
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 195 - 200
[15] OXIDATION-INDUCED DIFFUSION IN SILICON
COOPER, HW
DOUCETTE, EI
MEHNERT, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C66 - C66
[16] Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation
Hu, Kuan-Kan
Chang, Ruey-Dar
Woon, Wei Yen
AIP Advances, 2015, 5 (10):
[17] Simulation of cluster evaporation and transient enhanced diffusion in silicon
Rafferty, CS
Gilmer, GH
Jaraiz, M
Eaglesham, D
Gossmann, HJ
APPLIED PHYSICS LETTERS, 1996, 68 (17) : 2395 - 2397
[18] Transient enhanced diffusion in preamorphized silicon: The role of the surface
Cowern, N.E.B.
Alquier, D.
Omri, M.
Claverie, A.
Nejim, A.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 148 (1-4): : 257 - 261
[19] Implantation species dependence of transient enhanced diffusion in silicon
Uematsu, M
JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) : 120 - 125
[20] A simplified picture for transient enhanced diffusion of boron in silicon
Jung, MYL
Gunawan, R
Braatz, RD
Seebauer, EG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (01) : G1 - G7

← 1 2 3 4 5 →