Suppression of transient enhanced diffusion by local-oxidation-silicon-induced stress

被引：1
|
作者：
Okuno, M [1 ]
Aoyama, T [1 ]
Nakamura, S [1 ]
Arimoto, H [1 ]
Horiuchi, K [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期
关键词：
transient enhanced diffusion; TED; LOGOS; boron; mechanical stress; reverse short-channel effect;
D O I：
10.1143/JJAP.38.2411
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We evaluated the transient enhanced diffusion (TED) of boron on two different local oxidation silicon (LOCOS) structures. Boron profiles were measured by secondary ion mass spectroscopy (SIMS) sputtering from the back surface of the wafers to eliminate any effects caused by uneven surfaces of the LOCOS structures. To evaluate the TED at the surface, we also measured the threshold voltage roll-off of n-type metal-oxide-semiconductor transistors. The TED of boron was suppressed for the LOGOS structure with a high mechanical stress.
引用
收藏
页码：2411 / 2414
页数：4
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