The role of Ni buffer layer on high yield low temperature hermetic wafer bonding using In/Sn/Cu metallization

被引：25

作者：

Yu, Da-Quan ^{[1
]}

Lee, Chengkuo ^{[1
,2
]}

Yan, Li Ling ^{[1
]}

Choi, Won Kyoung ^{[1
]}

Yu, Aibin ^{[1
]}

Lau, John H. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 03期

关键词：

buffer layers; copper; indium; melting point; metallisation; nickel; solders; tin; wafer bonding; wafer level packaging; INTERFACIAL REACTIONS; SOLDER;

D O I：

10.1063/1.3074367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature hermetic wafer bonding using In/Sn interlayer and Au/Ni/Cu metallization as the high-melting-point (HMP) components was reported, wherein the thin Ni layer was introduced as a buffer layer to prevent solder consumption after their deposition. 8 in. wafer to wafer bonding was achieved at 180 degrees C for 20 min under 5.5 Mpa. Voids free seal joints composed of high temperature intermetallic compounds were obtained with good hermeticity. Present results show that the buffer layer is the key to ensure high yield hermetic wafer bonding when the low-melting-point solder was deposited directly on the HMP component.

引用

页数：3

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