Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy

被引：24

作者：

Belk, JG

Pashley, DW

McConville, CF

Sudijono, JL

Joyce, BA

Jones, TS

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND

[4] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT MAT,LONDON SW7 2BP,ENGLAND

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.56.10289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface of a compressively strained InAs epilayer grown on a GaAs(110) substrate has been resolved at the atomic level by scanning tunneling microscopy. The growth of the InAs film (>5 ML) involves a class of dislocations which are nucleated at the surface and subsequently channeled down to relieve the strain at the buried interface with the GaAs substrate. The effects of the disruption to the atomic geometry in the InAs surface layer due to this dislocation motion, and the accommodation of these imperfections by continuing epitaxy, are presented. [S0163-1829(97)09839-1].

引用

页码：10289 / 10296

页数：8

共 17 条

[1] Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A [J].