Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

被引：0

作者：

Kleshch, Victor ^{[1
]}

Serbun, Pavel ^{[2
]}

Orekhov, Anton ^{[3
]}

Luetzenkirchen-Hecht, Dirk ^{[2
]}

Obraztsov, Alexander ^{[1
,4
]}

Prommesberger, Christian ^{[5
]}

Langer, Christoph ^{[5
]}

Schreiner, Rupert ^{[5
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

[2] Univ Wuppertal, Dept Phys, Fac Math & Nat Sci, D-42119 Wuppertal, Germany

[3] NRC Kurchatov Inst, Moscow 123182, Russia

[4] Univ Eastern Finland, Dept Math & Phys, Joensuu 80101, Finland

[5] OTH Regensburg, Fac Gen Sci & Microsyst Technol, D-93051 Regensburg, Germany

来源：

2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2017年

关键词：

field emission; p-type silicon; metal nanoparticles; CATHODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments.

引用

页码：138 / 139

页数：2

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