Deposition of a TMDSO-Based Film by a Non-Equilibrium Atmospheric Pressure DC Plasma Jet

被引:24
|
作者
Deng, Xiaolong [1 ,2 ]
Nikiforov, Anton Yu [1 ,3 ]
De Geyter, Nathalie [1 ]
Morent, Rino [1 ]
Leys, Christophe [1 ]
机构
[1] Univ Ghent, Dept Appl Phys, B-9000 Ghent, Belgium
[2] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[3] Inst Solut Chem RAS, Ivanovo 153045, Russia
基金
欧洲研究理事会;
关键词
DC discharges; deposition; plasma jet; FT-IR; XPS; DIELECTRIC BARRIER DISCHARGE; COATINGS; POLYMERIZATION;
D O I
10.1002/ppap.201200166
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O-2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O-2 leading to an increase in SiO4 units at high oxygen flow rates.
引用
收藏
页码:641 / 648
页数:8
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