The Stoichiometry of Electroless Silicon Etching in Solutions of V2O5 and HF

被引：28

作者：

Kolasinski, Kurt W. ^{[1
]}

Barclay, William B. ^{[1
]}

机构：

[1] W Chester Univ, Dept Chem, W Chester, PA 19383 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2013年 / 52卷 / 26期

关键词：

electrochemistry; porous silicon; reaction mechanisms; stain etching; surface chemistry; FLUORIDE SOLUTIONS; OXIDATION; MECHANISM; EVOLUTION;

D O I：

10.1002/anie.201300755

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Performance by an oxidant in a leading role: In the electroless etching of silicon to form nanocrystalline porous-silicon thin films, the oxidant extracts one electron from the silicon valence band to initiate etching and then a second from the conduction band to suppress H2 formation. This discovery overturns the conventional wisdom regarding the role of the oxidant in stain etching, the stoichiometry of which was derived from the UV/Vis spectra shown. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：6731 / 6734

页数：4

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