Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

被引：9
|
作者：
Ohyama, H
Hirao, T
Simoen, E
Claeys, C
Onoda, S
Takami, Y
Itoh, H
机构：
[1] Kumamoto Natl Coll Technol, Dept Elect Engn, Kumamoto 8611102, Japan
[2] Takasaki JAERI, Gunma 3701292, Japan
[3] IMEC, B-3001 Louvain, Belgium
[4] Katholieke Univ Leuven, ESAT, INSYS, B-3001 Louvain, Belgium
[5] Tokai Univ, Hiratsuka, Kanagawa 2591292, Japan
[6] Rikkyo Univ, Yokohama, Kanagawa 2400101, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷
关键词：
InGaAsP laser diode; radiation damage; induced deep levels;
D O I：
10.1016/S0921-4526(01)00937-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Results of a study are presented on the degradation of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation. It is shown that the optical power decreases after irradiation. One hole trap is observed in the In0.76Ga0.24As0.55P0.45 multi-quantum well active region after room-temperature gamma- or e(-)-irradiation. The deep levels are thought to be associated with the Ga-vacancy. The decrease of the optical power is ascribed to the carrier removal and to the mobility reduction by carrier scattering, through the induced lattice defects. The change of device performance and the introduction rate of lattice defects decrease with increasing irradiation temperature, The optical power after a 200degreesC irradiation is nearly identical as before, for the fluence range studied. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1185 / 1188
页数：4
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