Effect of annealing on structural, optical and electrical properties of CdS thin films grown by ILGAR

被引：0

作者：

Qu, JJ ^{[1
]}

Jin, ZG ^{[1
]}

Wu, WB ^{[1
]}

Liu, XX ^{[1
]}

Cheng, ZJ ^{[1
]}

机构：

[1] Tianjin Univ, Sch Mat, Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China

来源：

JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2006年 / 21卷 / 01期

关键词：

CdS thin films; ILGAR; annealing;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS thin films were deposited by ILGAR (ion lay gas reaction) method. The effect of annealing temperature under N-2 atmosphere on the structural, chemical, topographical development and optical and electrical properties of CdS thin films was investigated by XRD, SEM, XPS, UV-VIS and two-probe technique. It is found that the cubic-phase of as-deposited CdS film transforms to hexagonal phase with a perfected orientation along (002) plane at 300 degrees C. The band gap decreases with increasing annealing temperature until 300 degrees C, which is consistent with the grain growth. The fall of dark and light resistivitiy 5 obvious with increasing annealing temperature, corresponding to the continuous grain growth and deviation of stoichiometry at higher temperature. The smooth and uniform, surface of as-deposited films becomes rougher through thermal treatment, which is related to grain growth and sublimation of CdS at a higher annealing temperature.

引用

页码：88 / 91

页数：4

共 17 条

[1]

BAR M, 2001, SOLAR ENERGY MAT SOL, V67, P121

[2] THE PREPARATION OF CDS PARTICLES IN SILICA GLASSES BY A SOL-GEL METHOD [J].