Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

被引：32

作者：

Ahn, Hyung-Woo ^{[1
,2
]}

Jeong, Doo Seok ^{[1
]}

Cheong, Byung-ki ^{[1
]}

Lee, Hosuk ^{[3
]}

Lee, Hosun ^{[3
]}

Kim, Su-dong ^{[1
]}

Shin, Sang-Yeol ^{[1
]}

Kim, Donghwan ^{[2
]}

Lee, Suyoun ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[3] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

TAILS;

D O I：

10.1063/1.4816349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device. (C) 2013 AIP Publishing LLC.

引用

页数：3

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