Twistable nonvolatile organic resistive memory devices

被引:25
|
作者
Song, Sunghoon [1 ]
Jang, Jingon [2 ]
Ji, Yongsung [1 ]
Park, Sungjun [1 ]
Kim, Tae-Wook [3 ]
Song, Younggul [2 ]
Yoon, Myung-Han [1 ]
Ko, Heung Cho [1 ]
Jung, Gun-Young [1 ]
Lee, Takhee [2 ]
机构
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Korea Inst Sci & Technol, Soft Innovat Mat Res Ctr, Bongdong Eup 565905, Jeollabukdo, South Korea
关键词
Organic memory; Twistable; Nonvolatile; Resistive memory; THIN-FILMS; TRANSISTORS; POLYMER; CIRCUITS; EFFICIENT; NANOPARTICLES; BISTABILITY; INTEGRATION; ELEMENTS;
D O I
10.1016/j.orgel.2013.05.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We fabricated an 8 x 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 x 10(4) s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to similar to 30 degrees. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:2087 / 2092
页数:6
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