Multi-function ESD protection circuit for UHF RFID devices in CMOS technology

被引：4

作者：

Boni, A. ^{[1
]}

Facen, A. ^{[2
]}

Bigi, M. ^{[2
]}

机构：

[1] Univ Parma, Dip Informat Technol, I-43100 Parma, Italy

[2] Silis Srl, Parma, Italy

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 07期

关键词：

D O I：

10.1049/el.2012.4354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and implementation of an electrostatic discharge protection suitable for UHF RFID devices in CMOS technology is presented. The circuit implements three fundamental functions for the RF interface: power limiting, backscatter modulation and electrostatic discharge protection. Since all functions are achieved by the same MOS device the additional shunt capacitance at the RF inputs is limited. Therefore the maximum reading distance of the RFID device is improved without sacrificing the electrostatic protection level.

引用

页码：453 / 454

页数：2