Al2O3/β-Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

被引：130

作者：

Zhou, Hong ^{[1
,2
]}

Alghmadi, Sami ^{[1
,2
]}

Si, Mengwei ^{[1
,2
]}

Qiu, Gang ^{[1
,2
]}

Ye, Peide D. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 11期

关键词：

beta-Ga2O3; interface; D-it; hysteresis; ALD Al2O3; piranha; annealing;

D O I：

10.1109/LED.2016.2609202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the improvement of atomic layer deposited (ALD) Al2O3/beta-Ga2O3 (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high quality interface is verified via the temperature dependent capacitance-voltage (C-V) and photo-assisted (deep UV) C-V measurements, considering its ultra wide bandgap of 4.8 eV for beta-Ga2O3. A low C-V hysteresis of 0.1 V from the measurement frequency of 1 kHz to 1 MHz is obtained, compared with the hysteresis of 0.45 V without piranha optimization. An average interface trap density (D-it) of 2.3 x 10(11) cm(-2) . eV(-1) is extracted from the photo C-V measurements. Piranha pretreatments and PDA turn out to be an effective way to improve the ALD Al2O3/beta-Ga2O3 (-201) interface for future high quality Ga2O3 metal-oxide-semiconductor field-effect transistors.

引用

页码：1411 / 1414

页数：4

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