Spatial dependence of the strain-induced coupling in highly strained quantum wells

被引：10
|
作者：
Armelles, C [1 ]
Velasco, VR [1 ]
机构：
[1] UNIV AUTONOMA MADRID,CSIC,INST CIENCIA MAT,E-28049 MADRID,SPAIN
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.54.16428
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The strain-induced modifications of the orbital components of the valence-band wave functions in strained GaAs quantum wells grown on GaP substrates and strained InAs quantum wells grown on GaAs substrates are studied. The relative weight of the orbital components is analyzed by comparing the piezoreflectance and the derivative of the reflectance spectra. Depending on the localization of the wave function the strain-induced changes are very different.
引用
收藏
页码：16428 / 16431
页数：4
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