First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

被引：0

作者：

Zhu, X ^{[1
]}

Wang, J ^{[1
]}

Pavlidis, D ^{[1
]}

Hsu, SH ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

heterojunction bipolar transistors; microwave amplifiers; MMICs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power transimpeclance amplifier is presented based on novel InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dB Omega transimpeclance, and a corresponding gain-bandwidth of 1.13 THz-Omega while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good Gain-Bandwidth-Product per dc power figure-of-merit (GBP/P-dc) of 1.05 GHz/mW.

引用

页码：101 / 103

页数：3

共 4 条

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[4] Zhu X, 2004, CONF P INDIUM PHOSPH, P757

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