Structure of Diamond-Silicon Interfaces

被引：0

作者：

Anderson, Jonathan ^{[1
]}

Hancock, B. Logan ^{[1
]}

Nazari, Mohammed ^{[1
]}

Holtz, Mark ^{[1
]}

Piner, Edwin L. ^{[1
]}

Goorsky, Mark S. ^{[2
]}

机构：

[1] Texas State Univ, Mat Sci Engn & Commercializat, 601 Univ Dr, San Marcos, TX 78666 USA

[2] Univ Calif Los Angeles, Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017 | 2017年

关键词：

EELS; STEM; FIB; CVD; diamond; CARBON; TEM;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We have studied the structure and composition of the interface of diamond thin films deposited on Si substrates by chemical vapor deposition using atomic resolution electron microscopy, and electron energy loss spectroscopy. The latter technique allows the analysis of the relative Si to C composition as well as the nature of the bonding to determine the relative sp(2)/sp(3) content of the diamond film. Results show considerable intermixing of silicon and carbon across an interfacial region 3 nm thick, which corresponds with an amorphous region. This region also contains the highest concentration of sp(2) bonded C. To perform this analysis a novel method of producing diamond TEM samples was developed which combines standard FIB techniques and removal of surface damage by thermal decomposition at 350 degrees C.

引用

页码：378 / 383

页数：6

共 12 条

[1] QUANTITATIVE NEAR-EDGE STRUCTURE-ANALYSIS OF DIAMOND-LIKE CARBON IN THE ELECTRON-MICROSCOPE USING A 2-WINDOW METHOD [J].