Photocarriers dynamics in silicon wafer studied with optical-pump terahertz-probe spectroscopy

被引：16

作者：

Li, Gaofang ^{[1
]}

Li, Dong ^{[1
]}

Jin, Zuanming ^{[1
]}

Ma, Guohong ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[2] Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2012年 / 285卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Optical pump-terahertz probe spectroscopy; Phase transition; Antireflection; Conductivity; Phase shift; TIME-DOMAIN SPECTROSCOPY; CONDUCTIVITY; ARRAYS; BEAMS;

D O I：

10.1016/j.optcom.2012.05.053

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical pump-terahertz probe spectroscopy is employed to investigate the optical characteristics of silicon wafer. The wafer surface undergoes a phase transition from insulator to metal for terahertz wave with increasing pump fluence. The real part of the pump-induced conductivity shows strong frequency dependence, which can be well described with Drude-Smith model. Our results also demonstrate that the photoexcited Si layer acts as a broadband terahertz pulse antireflection coating with proper pump fluence. In addition, it is observed that the terahertz pulse apparently arrives at the detector earlier when silicon is optically excited. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：4102 / 4106

页数：5

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