Study on parasitic and channel resistance of poly-Si thin-film transistors by metal-induced crystallization

被引：2

作者：

Saxena, Saurabh ^{[1
]}

Cheon, Jun Hyuk ^{[1
]}

Kennedy, G. P. ^{[1
]}

Bae, Jung Ho ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, TFT LCD Natl Lab, Seoul 1300270, South Korea

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2008年 / 16卷 / 07期

关键词：

Poly-Si TFT; MICC; parasitic resistance; channel resistance; metal foil;

D O I：

10.1889/1.2953478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The channel-length-dependent transfer characteristics of TFTs using poly-Si by metal-induced crystallization through a cap (MICC) of a-Si to evaluate the parasitic and channel resistances have been studied. The MICC p-channel TFTs studied in the present work showed a maximum field-effect mobility, threshold voltage, and gate swing of 53 cm(2)/V-sec, -4.4 V, and 0.8 V/dec for W/L = 12 mu m/6 mu m, 71 cm(2)/V-sec, -5.3 V, and 0.9 V/dec for W/L= 12 mu m/12 mu m, and 113 cm(2)/V-sec, -7 V, and 1 V/dec for W/L= 12 mu m/24 mu m, respectively. It is found that the parasitic resistance is higher than the channel resistance, and both decrease with increasing temperature.

引用

页码：721 / 725

页数：5