Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors

被引：7

作者：

Endo, Kazuhiko ^{[1
]}

Ishikawa, Yuki ^{[1
]}

Matsukawa, Takashi ^{[1
]}

Liu, Yongxun ^{[1
]}

O'uchi, Shin-ichi ^{[1
]}

Sakamoto, Kunihiro ^{[1
]}

Tsukada, Junichi ^{[1
]}

Yamauchi, Hiromi ^{[1
]}

Masahara, Meishoku ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 11期

关键词：

RESISTANCE;

D O I：

10.7567/JJAP.52.116503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer deposition (ALD) of SiO2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO2 can be deposited conformally at 50 degrees C for the TEOS and at 250 degrees C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 13 条

[1] Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions [J].

Dixit, A. ;

Anil, K. G. ;

Rooyackers, R. ;

Leys, F. ;

Kaiser, M. ;

Collaert, N. ;

De Meyer, K. ;

Jurczak, M. ;

Biesemans, S. .

SOLID-STATE ELECTRONICS, 2006, 50 (04) :587-593

[2] Metal organic atomic layer deposition of high-k gate dielectrics using plasma oxidation [J].

Endo, K ;

Tatsumi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B) :L685-L687

[3] ALD of SiO2 at room temperature using TEOS and H2O with NH3 as the catalyst [J].

Ferguson, JD ;

Smith, ER ;

Weimer, AW ;

George, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (08) :G528-G535

[4]

Hisamoto D, 2000, IEEE T ELECTRON DEV, V47, P2320, DOI 10.1109/16.887014

[5]

ITO T, 2003, S VLSI, P53

[6] Comparison of TiN films deposited using tetrakisdimethylaminotitanium and tetrakisdiethylaminotitanium by the atomic layer deposition method [J].

Kim, JY ;

Choi, GH ;

Kim, YD ;

Kim, Y ;

Jeon, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A) :4245-4248

[7] Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness [J].

Matsukawa, Takashi ;

Endo, Kazuhiko ;

Ishikawa, Yuki ;

Yamauchi, Hiromi ;

O'uchi, Shinichi ;

Liu, Yongxun ;

Tsukada, Junichi ;

Ishii, Kenichi ;

Sakamoto, Kunihiro ;

Suzuki, Eiichi ;

Masahara, Meishoku .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) :407-409

[8]

Nozu S., 2008, P ADV MET C, P60

[9] CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS [J].

PESSA, M ;

MAKELA, R ;

SUNTOLA, T .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :131-132

[10] CALCULATED THRESHOLD-VOLTAGE CHARACTERISTICS OF AN XMOS TRANSISTOR HAVING AN ADDITIONAL BOTTOM GATE [J].

SEKIGAWA, T ;

HAYASHI, Y .

SOLID-STATE ELECTRONICS, 1984, 27 (8-9) :827-828

← 1 2 →