Electrical and physical analysis of MoTa alloy for gate electrode applications

被引：14

作者：

Chen, B ^{[1
]}

Biswas, N ^{[1
]}

Misra, V ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 05期

关键词：

Molybdenum alloys;

D O I：

10.1149/1.2180710

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This article presents MoxTay as a potential candidate for dual metal complementary metal oxide semiconductor (CMOS) applications. The electrical characterization results of MoTa alloy indicates that the effective work function can be controlled to around 4.3 eV on SiO2 and is suitable for n-type MOS gate electrode application. The MoTa alloy forms a solid solution instead of an intermetallic compound. We report that the MoTa solid solution can achieve low work function values and is stable up to 900 C. X-ray diffraction results indicated only a single MoTa alloy phase. X-ray photoelectron spectroscopy analysis confirmed that no Mo-Ta compound bonding formed within the MoTa alloy. Moreover, from Auger electron spectroscopy and Rutherford backscattering spectroscopy analysis, MoTa was found to be stable on SiO2 under high-temperature anneals and no metal diffusion into substrate Si channel was detected. This indicates that MoxTay is a good candidate for CMOS metal gate applications. (c) 2006 The Electrochemical Society. [DOI: 10.1149/ 1.2180710] All rights reserved.

引用

页码：G417 / G419

页数：3

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