Design Margin Elimination Through Robust Timing Error Detection at Ultra-Low Voltage

被引:0
作者
Reyserhove, Hans [1 ]
Dehaene, Wim [1 ]
机构
[1] Katholieke Univ Leuven, ESAT MICAS, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium
来源
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2017年
关键词
CMOS digital integrated circuits; nearthresh-old logic; better-than-worst-case design; transmission gate logic; variation resilience; timing margin elimination; soft edge flip-flop; time borrowing; transition detector; error detection; error masking; point-of-first-failure; in situ; ultra-low voltage;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper discusses a timing error masking-aware ARM Cortex M0 microcontroller system. Through in-path timing error detection, operation at the point-of-first-failure is possible without corrupting the pipeline state, effectively eliminating traditional timing margins. Error events are flagged and gathered to allow dynamic voltage scaling. The error-aware microcontroller was implemented in a 40nm CMOS process and realizes ultra-low voltage operation down to 0.29V at 5MHz consuming 12.90pJ/cycle, or a MEP of 11.11pJ/cycle at 7.5MHz. Measurements show the in situ approach is ideal to overcome traditional SS corner design margins (75% energy reduction). Additionally it overcomes the limitations introduced by replica path based techniques typically plagued by intradie variations (8% reduction).
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页数:3
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