Effect of strain on the magnetic anisotropy of Co in Cu/Co/Ni/Cu/Si(001) epitaxial structures

被引：3
|
作者：
Vaz, CAF [1 ]
Lauhoff, G [1 ]
Lee, J [1 ]
Bland, JAC [1 ]
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
magnetic anisotropy; magnetoelastic effects; strain; thin films;
D O I：
10.1109/20.800686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of strain on the magnetic anisotropy of epitaxial Co/Ni/Cu/Si(001) structures was studied using polar magneto-optic Kerr effect (MOKE) magnetometry and reflection high energy electron diffraction (RHEED), Ca has the effect of reducing the perpendicular magnetic anisotropy of Ni for the whole range of Ni thicknesses (30 Angstrom to 120 Angstrom) while a variation of the perpendicular Co anisotropy constants with the Ni thickness is observed. The first and second order magnetoelastic coupling coefficients of Co were obtained from this strain-related variation,and are found to have opposite signs. We show that by varying the Ni thickness it is possible to sensitively central the magnetic anisotropy of the Co layer.
引用
收藏
页码：3850 / 3852
页数：3
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