Pulsed-laser deposition of Ti:sapphire thin films using high-speed rotating target

被引：3

作者：

Nakata, Y ^{[1
]}

Uetsuhara, H ^{[1
]}

Goto, S ^{[1
]}

Vasa, N ^{[1
]}

Okada, T ^{[1
]}

Maeda, M ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect & Syst Engn, Fukuoka 8128581, Japan

来源：

LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING IV | 1999年 / 3618卷

关键词：

pulsed-laser deposition; Ti : sapphire; droplets; thin films; waveguide laser;

D O I：

10.1117/12.352721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the deposition of Ti:sapphire thin films by the pulsed-laser deposition (PLD) method for the waveguide laser application, with an emphasis on the reduction of droplets which is inevitably generated during PLD. In order to eliminate the droplets from the film surface, we introduced centrifugal separation of the droplets out of the laser ablation plume using a high-speed rotating target. The behavior of droplets in the ablation plume generated with a high-speed rotating target is presented along with the film properties.

引用

页码：504 / 511

页数：8

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