Stoichiometry dependence of the optical properties of amorphous-like Inx-wGawZn1-xO1+0.5x-δ thin films

被引：5

作者：

Galca, A. C. ^{[1
]}

Socol, G. ^{[2
]}

Trinca, L. M. ^{[1
]}

Craciun, V. ^{[2
,3
]}

机构：

[1] Natl Inst Mat Phys, Lab Multifunct Mat & Struct, RO-077125 Magurele, Romania

[2] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, Laser Surface Plasma Interact Lab, RO-077125 Magurele, Romania

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED SURFACE SCIENCE | 2013年 / 281卷

关键词：

Transparent conductive oxides; Amorphous oxide semiconductors; Thin films; X-ray reflectivity; Spectroscopic ellipsometry; Optical properties; ZINC-OXIDE; OXYGEN; BAND;

D O I：

10.1016/j.apsusc.2013.01.176

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The paper investigates the dependence of the optical properties on cation concentration of amorphous-like indium gallium zinc oxide thin films (Inx-wGawZn1-xO1+0.5x-delta) with various (In + Ga)/(In + Ga + Zn) and Ga/(In + Ga) ratios obtained by pulsed laser deposition. X-ray reflectivity and spectroscopic ellipsometry thickness results were in good agreement. The proportionality between density and the refractive index in the transparency range is evidenced. The extracted physical parameters are clearly influenced by the variation of cation concentration. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：96 / 99

页数：4

共 23 条

[1] REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P QUATERNARY ALLOYS [J].

ADACHI, S ;

KATO, H ;

MOKI, A ;

OHTSUKA, K .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :478-480

[2]

Adachi S., 2009, Wiley Series in Materials for Electronic Optoelectronic Applications

[3] Valence band and band gap photoemission study of (111) In2O3 epitaxial films under interactions with oxygen, water and carbon monoxide [J].

Brinzari, V. ;

Korotcenkov, G. ;

Ivanov, M. ;

Nehasil, V. ;

Matolin, V. ;

Masek, K. ;

Kamei, M. .

SURFACE SCIENCE, 2007, 601 (23) :5585-5594

[4] Low temperature Si doped ZnO thin films for transparent conducting oxides [J].

Clatot, J. ;

Campet, G. ;

Zeinert, A. ;

Labrugere, C. ;

Nistor, M. ;

Rougier, A. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) :2357-2362

[5] Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption [J].

Fujiwara, H ;

Kondo, M .

PHYSICAL REVIEW B, 2005, 71 (07)

[6]

Fujiwara H., 2009, SPECTROSCOPIC ELLIPS

[7] Optical properties of amorphous-like indium zinc oxide and indium gallium zinc oxide thin films [J].

Galca, A. C. ;

Socol, G. ;

Craciun, V. .

THIN SOLID FILMS, 2012, 520 (14) :4722-4725

[8] Optical properties of zinc oxide thin films doped with aluminum and lithium [J].

Galca, A. C. ;

Secu, M. ;

Vlad, A. ;

Pedarnig, J. D. .

THIN SOLID FILMS, 2010, 518 (16) :4603-4606

[9] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[10] Experimental electronic structure of In2O3 and Ga2O3 [J].

Janowitz, Christoph ;

Scherer, Valentina ;

Mohamed, Mansour ;

Krapf, Alica ;

Dwelk, Helmut ;

Manzke, Recardo ;

Galazka, Zbigniew ;

Uecker, Reinhard ;

Irmscher, Klaus ;

Fornari, Roberto ;

Michling, Marcel ;

Schmeisser, Dieter ;

Weber, Justin R. ;

Varley, Joel B. ;

Van de Walle, Chris G. .

NEW JOURNAL OF PHYSICS, 2011, 13

← 1 2 3 →