Superconducting properties of laser annealed implanted Si:B epilayers

被引：13

作者：

Grockowiak, A. ^{[1
,2
]}

Klein, T. ^{[1
]}

Bustarret, E. ^{[1
]}

Kacmarcik, J. ^{[3
,4
]}

Dubois, C. ^{[5
]}

Prudon, G. ^{[5
]}

Hoummada, K. ^{[6
]}

Mangelinck, D. ^{[6
]}

Kociniewski, T. ^{[7
]}

Debarre, D. ^{[7
]}

Boulmer, J. ^{[7
]}

Marcenat, C. ^{[2
]}

机构：

[1] CNRS, Inst Neel, F-38042 Grenoble, France

[2] CEA, LATEQS, UMR E9001 UJF, Inst Nanosci & Cryogenie, F-38054 Grenoble, France

[3] IEP Slovak Acad Sci, Ctr Very Low Temp Phys, Kosice 04001, Slovakia

[4] FS UPJS, Kosice 04001, Slovakia

[5] Univ Lyon INSA, CNRS, Inst Nanotechnol Lyon, F-69621 Villeurbanne, France

[6] CNRS Univ Paul Cezanne, Inst Mat Microelect Nanosci Prov, F-13397 Marseille, France

[7] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2013年 / 26卷 / 04期

关键词：

BORON;

D O I：

10.1088/0953-2048/26/4/045009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the superconducting properties of heavily doped silicon epilayers obtained by the implantation of B atoms in silicon wafers and subsequent laser annealing (pulsed laser induced epitaxy). A critical temperature similar to 250 mK has been obtained for samples with a boron concentration (c(B)) ranging from 2 to 10 at.%, which were checked by atom probe tomography to be free of any significant boron clustering. The standard dopant implantation technique is therefore an alternative (with respect to gas immersion laser doping) process to induce superconductivity in boron-doped silicon. Superconductivity was not observed with any of the other implanted dopants (P, As, Al) with similar concentrations down to 50 mK.

引用

页数：4

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