Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si

被引：12
作者：
Chow, KH [1 ]
Hitti, B
Lord, JS
机构：
[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada
[2] TRIUMF, Vancouver, BC V6T 2A3, Canada
[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.73.113202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (Mu(BC)(0)) in Si. The stress was applied along the < 100 > direction of the sample and results in a significant change in the hyperfine parameters of Mu(BC)(0).
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页数：4
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