Behaviors of Fe, Zn, and Ga Substitution in CuInS2 Nanoparticles Probed with Anomalous X-ray Diffraction

被引：21

作者：

Connor, Stephen T. ^{[1
]}

Weil, Benjamin D. ^{[2
]}

Misra, Sumohan ^{[3
]}

Cui, Yi ^{[2
,4
]}

Toney, Michael F. ^{[3
,4
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

[4] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA

来源：

CHEMISTRY OF MATERIALS | 2013年 / 25卷 / 03期

基金：

美国国家科学基金会;

关键词：

CIS; CIGS; elemental substitution; doping; solar cell; chalcogenide; nanoparticle; anomalous X-ray diffraction; SOLAR-CELLS; SEMICONDUCTOR NANOCRYSTALS; PHOTOVOLTAICS;

D O I：

10.1021/cm302794t

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We synthesized CuInS2 nanoparticles containing up to 20% Fe, Zn, and Ga to study alloying in photovoltaic absorber materials with anomalous X-ray diffraction. The colloidal synthesis allowed for detailed analysis of complex quaternary compounds. Anomalous X-ray diffraction (AXRD) was used to clarify the elemental distribution between phases. Additionally, optical spectroscopy and X-ray diffraction were used to probe the band gap and crystal phase, respectively. Substitution of Zn into wurtzite CuInS2 produced a controllable increase in the optical band gap, whereas Ga did not substitute into wurtzite CuInS2, producing no band gap change. Secondary phase precipitation of a chalcopyrite phase was observed with Fe substitution, along with a decrease of the optical band gap. This work demonstrates progress in compositional and structural analysis of quaternary chalcogenide materials using AXRD.

引用

页码：320 / 325

页数：6

共 20 条

[11] Effect of Ga incorporation in sequentially prepared CuInS2 thin film absorbers [J].