Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition

被引：63
|
作者：
Lin, Yen-Ting [1 ,2 ]
Yeh, Ting-Wei [1 ,3 ]
Dapkus, P. Daniel [1 ,2 ,3 ]
机构：
[1] Univ So Calif, Ctr Energy Nanosci, Los Angeles, CA 90089 USA
[2] Univ So Calif, Ming Hsieh Dept Elect Engn, Los Angeles, CA 90089 USA
[3] Univ So Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
来源：
NANOTECHNOLOGY | 2012年 / 23卷 / 46期
基金：
美国国家科学基金会;
关键词：
MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; NANOWIRES; NANODEVICES; ARRAYS; MOCVD; ALN;
D O I：
10.1088/0957-4484/23/46/465601
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The growth mechanism for the formation of GaN nanorods using metalorganic chemical vapor deposition (MOCVD) selective area growth by pulsed source injection is proposed. The pulsed mode procedure and the kinetic model are discussed and experiments performed to support the model are described. The achievement of rod shape nanostructures grown by the pulsed mode can be attributed to two mechanisms: (1) the differences in the adsorption/desorption behavior of Ga adatoms on the c-plane (0001) and the boundary m-planes {1 (1) over bar 00}, and (2) the growth behavior of the semi-polar planes (especially the semi-polar {1 (1) over bar 01} plane).
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页数：6
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