Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell

被引：14

作者：

Lee, Shin Buhm ^{[2
]}

Chang, Seo Hyoung ^{[2
]}

Yoo, Hyang Keun ^{[2
]}

Yoon, Moon Jee ^{[2
]}

Yang, Sang Mo ^{[2
]}

Kang, Bo Soo ^{[1
]}

机构：

[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, Gyeonggi Do, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, ReCFI, Seoul 151747, South Korea

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Resistance switching; Memristor; Resistance random-access memory; MEMORY;

D O I：

10.1016/j.cap.2012.04.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiOx/Pt cell. For an asymmetric electrode configuration of Ti/SrTiOx/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiOx/Pt cell, O-2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1515 / 1517

页数：3

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