Development of Scanning Tunneling Potentiometry for Semiconducting Samples

被引：6

作者：

Hamada, Masayuki ^{[1
]}

Hasegawa, Yukio ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 12期

关键词：

LOCAL WORK FUNCTION; THIN-FILMS; ELECTRONIC TRANSPORT; GRAIN-BOUNDARIES; METAL-FILMS; MICROSCOPY; STEPS; FIELD; GOLD; FLOW;

D O I：

10.1143/JJAP.51.125202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a new setup of scanning tunneling potentiometry (STP) applicable to semiconducting samples, which cannot be studied by conventional STP since it measures the local electrostatic potential from a voltage that makes the tunneling current zero. In the new STP setup, the local potential below the tip and its spatial distribution are obtained by measuring the applied voltage that makes the tunneling current fixed at a nonzero value. Using a gold thin film sample we demonstrated the performance of the new STP setup and found that the local potential can be measured in the nonzero tunneling current mode with an energy sensitivity of similar to 20 mu eV and nanometer-scale spatial resolution. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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