Periphery deformations and tunneling at correlated quantum Hall edges

被引:32
作者
Zülicke, U [1 ]
MacDonald, AH [1 ]
机构
[1] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 03期
关键词
D O I
10.1103/PhysRevB.60.1837
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We argue that, at any filling factor v, correlated quantum Hall systems possess a set of chiral boson excitations that are generated by electronically rigid deformations of the system's periphery. We submit that tunneling electrons can be accommodated, at low energies, in these systems only by periphery-deformation excitations. This property would explain the recent observation of a tunneling density of states at the edge that does not exhibit a strong dependence on the occurrence or absence of the quantum Hall effect and has a power-law dependence on energy with exponent v(-1)-1. [S0163-1829(99)00927-3].
引用
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页码:1837 / 1841
页数:5
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