Random bit generation using an optically injected semiconductor laser in chaos with oversampling

被引:106
作者
Li, Xiao-Zhou [1 ]
Chan, Sze-Chun [1 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
关键词
FEEDBACK;
D O I
10.1364/OL.37.002163
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Random bit generation is experimentally demonstrated using a semiconductor laser driven into chaos by optical injection. The laser is not subject to any feedback so that the chaotic waveform possesses very little autocorrelation. Random bit generation is achieved at a sampling rate of 10 GHz even when only a fractional bandwidth of 1.5 GHz within a much broader chaotic bandwidth is digitized. By retaining only 3 least significant bits per sample, an output bit rate of 30 Gbps is attained. The approach requires no complicated postprocessing and has no stringent requirement on the electronics bandwidth. (C) 2012 Optical Society of America
引用
收藏
页码:2163 / 2165
页数:3
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