Ab initio study of macroscopic polarization of AlN, GaN and AlGaN

被引：9
作者：
Supryadkina, Irina [1 ]
Abgaryan, Karine [1 ]
Bazhanov, Dmitry [1 ]
Mutigullin, Ilya [1 ]
机构：
[1] RAS, Dorodnicyn Comp Ctr, Moscow 119333, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 | 2014年 / 11卷 / 02期
关键词：
ab initio study; III-V nitrides; spontaneous and piezoelectric polarizations; PIEZOELECTRIC POLARIZATION; NITRIDE; HETEROSTRUCTURES; CONSTANTS; CRYSTALS; GROWTH; INN;
D O I：
10.1002/pssc.201300756
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work we report the results of theoretical study based on first-principles calculations of the polarization properties of semiconductors AlN, GaN and AlGaN with wurtzite structure. The values of the spontaneous and the piezoelectric polarizations and the piezoelectric constants were calculated for these nitride compounds. We study the nonlinear dependence of the spontaneous polarization on AlGaN composition. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：307 / 311
页数：5
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