Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

被引：48

作者：

Coquand, Remi ^{[1
,2
,3
]}

Casse, Mikael ^{[4
]}

Barraud, Sylvain ^{[4
]}

Cooper, David ^{[4
]}

Maffini-Alvaro, Virginie ^{[4
]}

Samson, Marie-Pierre ^{[2
,4
]}

Monfray, Stephane ^{[2
]}

Boeuf, Frederic ^{[2
]}

Ghibaudo, Gerard ^{[5
]}

Faynot, Olivier ^{[4
]}

Poiroux, Thierry ^{[4
]}

机构：

[1] Univ Grenoble, F-38041 Grenoble, France

[2] STMicroelectronics, F-38926 Crolles, France

[3] CEA Leti, IMEP LAHC Lab, F-38054 Grenoble, France

[4] CEA Leti, F-38054 Grenoble, France

[5] IMEP LAHC Lab, F-38016 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 02期

关键词：

Carrier mobility; nanowire (NW); Omega gate; strain relaxation; trigate; MOBILITY; SILICON; SI;

D O I：

10.1109/TED.2012.2231684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed study of performance in uniaxially strained Si nanowire (NW) transistors fabricated by lateral strain relaxation of biaxial strained-SOI (sSOI) substrate is presented. Two-dimensional strain imaging demonstrates the lateral strain relaxation resulting from nanoscale patterning. An improvement of electron mobility in sSOI NW scaled down to 10-nm width is successfully demonstrated (+55% with respect to SOI NW) due to remaining uniaxial tensile strain. This improvement is maintained even by using hydrogen annealing to form an Omega gate. For short gate length, a strain-induced I-ON gain as high as +40% at L-G = 45 nm is achieved for a multiple-NW active pattern.

引用

页码：727 / 732

页数：6

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