Role of surface defects in room-temperature growth of metals on Si(100)2 x 1

被引：0

作者：

Kocán, N ^{[1
]}

Sobotík, P ^{[1
]}

Ostádal, I ^{[1
]}

机构：

[1] Charles Univ, Fac Math & Phys, Dept Elect & Vacuum Phys, CR-18000 Prague 8, Czech Republic

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 2006年 / 56卷 / 01期

关键词：

heteroepitaxy; scanning tunneling microscopy; Si(100); nucleation; defects;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nucleation and formation of silver islands on the Si(100) 2 x 1 surface was for the first time studied by scanning tunneling microscopy directly during deposition. Crucial role of C-type defects on growth has been observed. Rapidly diffusing Ag atoms nucleate on these defects and during island evolution the defects represent stable terminations of Ag atomic chains.

引用

页码：27 / 32

页数：6

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