Sulfur:: A donor dopant for n-type diamond semiconductors

被引：199
|
作者：
Sakaguchi, I
Gamo, MN
Kikuchi, Y
Yasu, E
Haneda, H
Suzuki, T
Ando, T
机构：
[1] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3050044, Japan
[2] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5648680, Japan
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.60.R2139
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Evidence for the donor nature of sulfur in diamond was obtained by introducing hydrogen sulfide into the microwave assisted plasma chemical vapor deposition process. The sulfur was successfully doped into homoepitaxial diamond (100) films, which exhibit n-type conduction by Hall-effect measurements in the temperature range of 250-550 K. The mobility of electrons at room temperature was 597 cm(2) V-1 s(-1). The ionization energy of 0.38 eV was determined by measuring the carrier concentration as a function of temperature. [S0163-1829(99)50828-X].
引用
收藏
页码：R2139 / R2141
页数：3
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