Engineering strain and conductivity of MoO3 by ion implantation

被引：22

作者：

Pereira, Daniela R. ^{[1
,2
,3
,4
]}

Diaz-Guerra, Carlos ^{[5
]}

Peres, Marco ^{[1
]}

Magalhaes, Sergio ^{[1
]}

Correia, Joao G. ^{[3
]}

Marques, Jose G. ^{[3
]}

Silva, Ana G. ^{[6
]}

Alves, Eduardo ^{[1
]}

Lorenz, Katharina ^{[1
,2
]}

机构：

[1] Univ Lisbon, Inst Super Tecn, IPFN, Estr Nacl 10,Km 139-7, P-2695066 Bobadela Lrs, Portugal

[2] INESC MN, Lisbon, Portugal

[3] IST, C2TN, Campus Tecnol & Nucl,Estr Nacl 10,Km 139-7, P-2695066 Bobadela Lrs, Portugal

[4] Univ Nova Lisboa, Dept Fis, Fac Ciencias & Tecnol, Lisbon, Portugal

[5] Univ Complutense Madrid, Fac Ciencias Fis, Dept Fis Mat, Madrid, Spain

[6] Univ Nova Lisboa, Cefitec, Dept Fis, Fac Ciencias & Tecnol, Campus Caparica, P-2829516 Caparica, Portugal

来源：

ACTA MATERIALIA | 2019年 / 169卷

关键词：

Molybdenum oxide; Implantation/irradiation; X-ray diffraction (XRD); Raman spectroscopy; Electrical properties; SITU RAMAN-SPECTROSCOPY; MOLYBDENUM OXIDES; CRYSTALLOGRAPHIC SHEAR; OXYGEN VACANCIES; DAMAGE FORMATION; AMORPHIZATION; MECHANISMS; PROFILES; DEFECTS; GROWTH;

D O I：

10.1016/j.actamat.2019.02.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

alpha-MoO3 lamellar crystals are implanted with 170 keV oxygen ions at room temperature and with fluences between 1 x 10(12) cm(-2) and 1 x 10(17) cm(-2), in order to modify the electrical and structural properties of the crystals. A controllable and significant increase of the electrical conductivity, over several orders of magnitude, is observed after implantation at high fluences. Based on high resolution X-ray diffraction (HRXRD) and micro-Raman spectroscopy measurements, this effect is attributed to the formation of donor-type defect complexes and new phases more conductive than the alpha-MoO3 orthorhombic phase. A significant expansion of the b lattice parameter, increasing with fluence, is observed as a response to the defects created by implantation. Strain build-up occurs in several steps and in distinct depth regions within the implanted layer. Contrary to the typical values reported for other implanted oxide materials, an unusually high maximum perpendicular deformation of similar to 3% is verified. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：15 / 27

页数：13

共 66 条

[61] High-level damage saturation below amorphisation in ion implanted β-Ga2O3 [J].

Wendler, Elke ;

Treiber, Enrico ;

Baldauf, Julia ;

Wolf, Steffen ;

Ronning, Carsten .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 379 :85-90

[62] Gap States Assisted MoO3 Nanobelt Photodetector with Wide Spectrum Response [J].

Xiang, Du ;

Han, Cheng ;

Zhang, Jialin ;

Chen, Wei .

SCIENTIFIC REPORTS, 2014, 4

[63] Orientation Controllable Growth of MoO3 Nanoflakes: Micro-Raman, Field Emission, and Birefringence Properties [J].

Yan, Bin ;

Zheng, Zhe ;

Zhang, Jixuan ;

Gong, Hao ;

Shen, Zexiang ;

Huang, Wei ;

Yu, Ting .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (47) :20259-20263

[64] Vapour phase growth of orthorhombic molybdenum trioxide crystals at normal pressure of purified air [J].

Zeng, HC .

JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) :393-402

[65] STRAIN RELIEF MECHANISM FOR DAMAGE GROWTH DURING HIGH-DOSE, O+ IMPLANTATION OF SI [J].

ZHOU, DS ;

HOLLAND, OW ;

BUDAI, JD .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3580-3582

[66]

Ziegler J. F., 1988, THE STOPPING AND RAN

← 1 2 3 4 5 6 7 →